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CHA2157
RoHS COMPLIANT
55-60GHz Low Noise / Medium Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a HEMT process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Gain & Rloss (dB)
15 10 5 0 -5 -10 -15 -20 55
Gain S11
S22
Main Features
3.5 dB noise figure 10 dB 1dB gain 15 dBm output power (-1dB gain comp.) DC power consumption, 80mA @ 3.3V Chip size: 1.71 x 1.04 x 0.10 mm
56
57
58 59 60 Frequency (GHz)
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25 C Symbol
Fop G NF P1dB Id
Parameter
Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression Bias current
Min
55 8
Typ
10 3.5
Max
60 12 4.5
Unit
GHz dB dB dBm
13
15 80 150
mA
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA21577150 - 30 May 07 1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2157
Tamb = +25 Vd = 3.3V C, Symbol
Fop G G Is NF P1dB VSWRin
55-60GHz Low Noise Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure CW output power at 1dB compression (1) Input VSWR (1) 13 20
Min
55 8
Typ
Max
60
Unit
GHz dB dB dB
10 1.0 25 3.5 15 3.0:1 3.0:1 3.3 80
12 2.0
4.5
dB dBm
6.0:1 6.0:1 3.8 150 V mA
VSWRout Output VSWR (1) Vd Id DC Voltage Bias current
(1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. A wire bond of typically 0.1 to 0.15nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb. = 25 (1) C Symbol
Vd Id Vg Pin Ta Tstg Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Parameter
Drain bias voltage
Values
4.0 150 -2.0 to +0.4 +15 -40 to +85 -55 to +155
Unit
V mA V dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : DSCHA21577150 - 30 May 07
2/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
55-60GHz Low Noise Amplifier
Typical On Wafer Scattering Parameters
Bias Conditions: Vd=+3.3V, Vg1=Vg2 to have Id=80mA
F(GHz) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 S11 dB -6,19 -6,01 -5,78 -5,57 -5,32 -5,04 -4,8 -4,5 -4,32 -4,06 -3,83 -3,65 -3,56 -3,42 -3,33 -3,32 -3,35 -3,47 -3,69 -4,05 -4,58 -5,45 -6,88 -9,34 -13,51 -21,64 -13,04 -7,18 -4,19 -2,48 -1,56 -1,13 -0,93 -1,23 -2,14 -3,09 -4,76 -6,29 -7,54 -7,99 -7,63 -6,75 -5,78 -4,75 -4,31 -4,01 S11 deg 168,5 163,4 158,3 152,8 148,7 142,7 137,4 131,6 125,4 119,8 113,1 106,5 99,7 93,1 85,6 78,1 70,4 62,2 53,6 44,7 35 24,5 13,9 3,7 -1,3 49,9 95,8 87,7 70,7 53,6 37,1 22 6 -8,5 -22 -34,3 -42,4 -45,5 -46,3 -42,1 -39 -39,3 -43,8 -51,4 -63,3 -71,9 S12 dB -53,85 -53,05 -55,51 -63,53 -49,37 -51,91 -51,32 -52,83 -50,9 -49,33 -49,97 -49,38 -47,44 -45,59 -46,24 -43,98 -42,56 -41,07 -40,29 -40,08 -40,8 -41,16 -41,12 -42,27 -41,21 -41,07 -47,32 -50,87 -42,36 -38,05 -35,54 -34,48 -32,16 -28,67 -28,47 -29,18 -29,48 -27,33 -27,27 -27,59 -27,52 -27,7 -26,84 -26,96 -26,49 -26,42 S12 deg 104,2 83,1 61,9 136,7 58,7 58,7 48,4 40,4 67 39,6 36,3 37,1 39,9 23,7 25 12,4 2 -12,4 -28,3 -46,4 -63,2 -70,6 -84,2 -89,6 -108,8 -130,8 -151,5 -74,5 -79,2 -96,4 -113,9 -122,1 -127,2 -156,4 176,8 157,7 147,1 127,2 99,4 81,8 64,5 50,7 38,4 22,3 4,2 -10,1
3/6
CHA2157
S21 dB -4,75 -5,02 -5,8 -6,59 -6,68 -7,14 -7,51 -8,77 -9,37 -9,09 -10,11 -11,13 -11,39 -10,79 -9,24 -7,26 -5,66 -5,35 -5,21 -5,56 -5,61 -4,92 -3,29 -1,05 1,77 4,18 5,47 7,16 8,35 9,2 9,96 10,55 11,32 11,99 12,18 12,1 11,94 11,65 11,31 10,87 10,44 10 9,64 9,39 9,1 8,56
S21 deg -110,1 -126 -141,7 -154,4 -164,3 -174 172,8 162,3 162,4 150,7 142,7 139,8 143,2 145,5 145,2 139,8 125,3 110,7 98,9 91,8 88,6 89,3 88 83,8 74,4 55,5 38,5 20,8 -0,2 -19,7 -39,3 -58,1 -77 -98 -121 -142,7 -163,6 176,6 156,8 137,9 119,9 102,2 84,8 67,5 46,8 30,1
S22 dB -2,94 -3,07 -3,32 -3,34 -3,7 -4,2 -4,71 -5,05 -5,33 -6,14 -6,85 -7,43 -7,66 -7,83 -7,15 -5,72 -4,07 -2,81 -2,13 -1,91 -1,95 -2,12 -2,3 -2,51 -2,7 -3,22 -3,59 -4,06 -4,88 -5,68 -6,66 -7,73 -9,16 -10,87 -11,61 -11,33 -10,87 -10,03 -9,34 -8,91 -8,6 -8,49 -8,27 -8,12 -8,13 -7,89
S22 deg 146,8 142,5 138,2 134,5 127,7 123,4 120,3 118 114 111,7 111,1 113,4 116,1 120,6 127,2 129,5 126,3 117,8 107,8 97,8 88,9 80,9 73,4 66,2 58,2 50,2 43,3 34,9 26,9 20 12,8 6,5 0,1 0,2 6,6 7,5 5,3 2,7 -6,2 -16,1 -27 -37,5 -48,9 -59,8 -69,7 -80,5
Ref. : DSCHA21577150 - 30 May 07
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2157
Typical on Wafer Measurements
55-60GHz Low Noise Amplifier
Bias conditions: Tamb=+25 Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA C,
15 10
15
Gain Gain & Rloss (dB)
10 5 0 -5 -10
Gain & Rloss (dB)
5 0 -5 -10 -15 -20 0 10 20 30 40 50 60
Gain S11
S11
S22
-15 -20 55 56 57 58 59 60
S22
Frequency (GHz)
Frequency (GHz)
Typical packaged Measurements
Bias conditions: Tamb=+25 Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA C,
15 10
0 -5 -10 -15 -20 50 52 54 56 58 60
S11
S22
Gain & NF (dB)
5
Gain
14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 50 52 54
Gain
Gain & Rloss (dB)
NF
56
58
60
Frequency (GHz)
Frequency (GHz)
Ref. : DSCHA21577150 - 30 May 07
4/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
55-60GHz Low Noise Amplifier
Chip Assembly and Mechanical Data
CHA2157
Note: Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered.
Bonding pad positions.
(Chip thickness: 100m. All dimensions are in micrometers)
Ref. : DSCHA21577150 - 30 May 07
5/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA2157
55-60GHz Low Noise Amplifier
Ordering Information
Chip form: CHA2157-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : DSCHA21577150 - 30 May 07 6/6 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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